Originally Aired - Monday, December 11 • 9:15 AM - 9:30 AM PST
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Location: Grand Ballroom B
Title: 1-0 | IEDM, IEEE and EDS Awards
Description:
2023 IEEE Andrew S. Grove Award Awarded to Hon-Sum Philip Wong "For contributions to novel and advanced semiconductor device concepts and their implementation". 2022 Roger A. Haken Best Student Paper Award Awarded to Ruben Asanovski for the paper entitled, “New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications”. 2022 EDS Paul Rappaport Award To: Akshay Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi For the paper entitled: “InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz “ 2022 EDS George Smith Award To: Sourav De, Franz Müller, Nellie Laleni, Maximilian Lederer, Yannick Raffel, Shaown Mojumder, Alptekin Vardar, Sukhrob Abdulazhanov, Tarek Ali, Stefan Dünkel, Sven Beyer, Konrad Seidel, and Thomas Kämpfe For the paper entitled: “Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array” 2022 EDS Leo Esaki Award To: Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, and Masaharu Kobayashi For the paper entitled: “Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Mode” 2023 EDS Distinguished Service Award To: Fernando Guarin, Retired, NY, USA “For Outstanding and Dedicated Service for the Benefit and Advancement of the Electron Devices Society” 2023 EDS Education Award To: Gary S. May, University of California, Davis, CA, USA “For dedicated leadership and mentorship that has diversified academic leaders in education” 2023 EDS Lester F. Eastman Award “For outstanding achievement in high-performance semiconductor devices” 2023 EDS J.J. Ebers Award "For development of emerging heterogeneous integration architectures for 3D ICs" 2023 IEEE/EDS Fellows Shekhar Bhansali - for contributions to portable realtime sensing devices for continuous monitoring Kyung CheoI CHOI - for contributions to emissive, flexible, and wearable displays Tetsuo Endoh - for contributions to nonvolatile memory and spintronic logic Harald Gossner - for contributions to ESD design of advanced IC devices and high speed systems Masataka Higashiwaki- for contributions to gallium oxide electronics and milimeter-wave gallium nitride transistors Andras Kis - for contributions to the development of 2D materials and electronic devices Guann-pyng Li - for contributions to the bipolar device, circuit and technology in silicon and compound semiconductors Takashi Matsuoka - for contributions to laser diodes for optical communications and nitride semiconductors for light emitting devices Thomas Mikolajick - for contributions to nonvolatile memory Yoshiaki Nakano - for contributions to semiconductor integrated photonic devices and circuits Kenichi Okada - for contributions to millimeter-wave communication circuits design Boon S. Ooi - for contributions to broadband light emitters and visible light communications Guann Pyng Li - for contirbutions to the bipolar device, circuit and technology in silicon and compound semiconductors Munaf T Rahimo - for contributions to high-voltage insulated gate bipolar transistors for grid applications Sei-Hyung Ryu - for contributions to silicon carbide power device technology Abu Sebastian - for contributions to in-memory computing for scientific applications Dmitri Strukov - for contributions to neuromorphic and alternative computing systems based on emerging memory devices Richard Syms - for contributions to mass spectrometers based on microelectromechanical system technology Miguel Urteaga – for contributions to terahertz heterojunction bipolar transistor integrated circuit technology Pierre Verlinden - for leadership in high performance silicon solar cell and photovoltaics technology and commercialization Hua Wang - for contributions to high-efficiency microwave and millimeter-wave power amplifiers Qiangfei Xia - for contributions to resistive memory arrays and devices for in-memory computing
To: James C. Hwang, Cornell University, Ithaca, NY, USA
To: Mukta Farooq, IBM, Hopewell Junction, NY, USA
*This is a complete listing of the 2023 IEEE/EDS Fellows. Not all Fellows will be recognized at the 2023 IEDM
Type: Plenary
Monday, December 11, 2023 - 09:00 AM
1 | Plenary
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